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• W2044166329 abstract "Semiconducting Al-doped ZnO films were deposited by atomic layer deposition at low deposition temperatures of less than 100 °C and used to fabricate transistors. At deposition temperatures of less than 100 °C, the carrier concentrations of the Al:ZnO thin films were below 1018 cm−3, which corresponds to the transparent semiconducting oxide region. The reduced carrier concentrations at low deposition temperatures were attributed to the activation energy for carrier generation of ∼0.7 eV. The devices characteristics of the semiconducting Al:ZnO consisted of mobilities of 1.95 cm2/V s and on–off ratios of over 106. At a positive gate stress of less than 10 V, the Vth shift of the Al:ZnO after 3000 s was ∼3 V, which is almost 1 order of magnitude lower than that of ZnO thin-film transistors." @default.
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• W2044166329 date "2012-04-30" @default.
• W2044166329 modified "2023-09-23" @default.
• W2044166329 title "Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties" @default.
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• W2044166329 doi "https://doi.org/10.1116/1.4710519" @default.
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