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- W2044260058 abstract "A model is proposed and calculation is performed of the simultaneous diffusion of donor and acceptor impurities during the fabrication of a silicon planar transistor structure. The model includes (i) a two-flux diffusion mechanism for the base impurity, (ii) quasi-equilibrium spatial distribution of the electrically charged vacancies, and (iii) capture of the impurity interstitials by the vacancies. It is shown that the base impurity diffusion can be enhanced (push effect) as well as retarded (pull effect) depending on resulting thickness of the base.Es wird ein Modell fur die gleichzeitige Diffusion von Donator- und Akzeptoratomen wahrend der Herstellung planarer Si-Transistorstrukturen vorglagen, und entspechende Rechnungen werden durchgefuhrt. Das Modell schliest 1. Zweikomponenten-Diffusion fur die Basisfremdatome, 2. raumliche Quasigleichgewichtsverteilung der elektrisch geladenen Leerstellen, 3. Einfang der Zwischengitterfremdatome durch Leerstellen ein. Es wird gezeigt, das die Basisfremdatomdiffusion sowohl verstarkt (Push-Effekt) als auch verzogert (Pull-Effekt) werden kann, je nach der Dicke der Basis." @default.
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- W2044260058 date "1992-05-16" @default.
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- W2044260058 title "Model of the base-diffusivity push effect in a silicon transistor structure" @default.
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