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- W2044263929 abstract "A new dielectric film technology characterized by a novel multilayer structure (Ta 2 O 5 /SiO 2 /Si 3 N 4 ) on poly-silicon is developed to realize high-density dRAMs. The SiO 2 interface is grown by dry oxidation of the Ta 2 O 5 /Si 3 N 4 layers at temperatures higher than 900°C. This film has a capacitance per unit area from 5.5 to 6.0 fF/µm2, which is equivalent to 6.0 to 6.5nm thick SiO 2 . The leakage current at an effective electric field of 5MV/cm is less than 10-9A/cm2, and the extrapolated time to failure (TDDB) is longer than 1000 years." @default.
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- W2044263929 date "1986-01-01" @default.
- W2044263929 modified "2023-09-27" @default.
- W2044263929 title "Oxidized Ta<inf>2</inf>O<inf>5</inf>/Si<inf>3</inf>N<inf>4</inf>dielectric films for ultimate-STC dRAMs" @default.
- W2044263929 doi "https://doi.org/10.1109/iedm.1986.191284" @default.
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