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• W2044285255 abstract "The Morse two-body potential and the second-moment approximation of the tight-binding (TB-SMA) many-body potential are employed and compared in modeling the sputtering of Cu atoms onto the Cu(100) substrate by Molecular dynamics simulation. The results indicate that when the TB-SMA potential is used under a 5 atom/ps deposition rate, the epitaxy mode of film growth is observed as the incident energy is lower than 3 eV, the film mixing mode clearly occurs from 3 to 5 eV, and the sputtering phenomenon is significant after 10 eV. When the Morse potential is used, the epitaxy mode is observed below 5 eV, the film mixing mode occurs around 5−50 eV, and the sputtering process may be clear only after 50 eV. As for the atomic-level stress, the average normal stress along thickness direction and the average mean biaxial stress are considered. Both the average stresses at the substrate layer are decreased, as the substrate temperature is increased. Increasing the substrate temperature leads to a gradual increase on the standard deviation of the normal stress along thickness direction at the substrate layer." @default.
• W2044285255 created "2016-06-24" @default.
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• W2044285255 date "2008-02-28" @default.
• W2044285255 modified "2023-09-27" @default.
• W2044285255 title "Atomic-Level Stress Calculation and Two Potentials for Critical Conditions of Deposition Process" @default.
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• W2044285255 doi "https://doi.org/10.1021/cg070584h" @default.
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