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- W2044291498 abstract "Reactive ion etching (RIE), employing CH4/H2/Ar plasmas, of ZnS films grown by metalorganic chemical vapor deposition (MOCVD) is reported. The etching rates are investigated as functions of the plasma parameters: pressure, RF power and relative composition of reactive gases. It is found that the amount of CH4 in a CH4/H2/Ar gas discharge will decide whether the polymer will be produced. The optimum composition of the mixed gas is 1CH4/7H2/4Ar, when the pressure, RF power and total flow rate are 30 mTorr, 245 W and 30 sccm, respectively. The etching mechanism is also proposed. The quality of the etched surfaces under these conditions is examined by X-ray photoelectron spectroscopy. It is found that the amount of overt damage is small under these etching conditions. A dot-matrix thin-film electroluminescent device employing a ZnS:Mn phosphor layer is also fabricated by this etching process." @default.
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- W2044291498 date "1997-10-01" @default.
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- W2044291498 title "Reactive ion etching of ZnS films for thin-film electroluminescent devices" @default.
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- W2044291498 doi "https://doi.org/10.1016/s0254-0584(97)01920-2" @default.
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