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• W2044317009 abstract "The effect of Ga implantation and thermal annealing on InGaAs/InP multiple quantum well structures is investigated by photoluminescence (PL) and sputtering Auger electron spectroscopy. It is found that the interdiffusion of both column III and column V atoms occurs at the interfaces between InP barrier and InGaAs well layers, but the degree of intermixing near the sample surface is small. The variations of PL peak energy shift with annealing and dose suggest that the PL peak shift is attributed to a combination of intermixing and stress." @default.
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• W2044317009 date "1989-02-06" @default.
• W2044317009 modified "2023-09-25" @default.
• W2044317009 title "Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation" @default.
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• W2044317009 doi "https://doi.org/10.1063/1.100918" @default.
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