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- W2044341747 abstract "It had been reported that liquid-phase deposition (LPD) using saturated hydrofluosilicic acid is useful for silicon metal-oxide-semiconductor (MOS) solar cells. However, the LPD preparation time is long. In this work, anodic oxidation in saturated solution is proposed as an alternative method to grow the room temperature oxides for MOS solar cells. It was found that the oxide preparation time is reduced significantly without sacrificing the efficiency in comparison with that by the LPD method. The oxide prepared by anodization (ANO) in was found to be deposition-like which is different from that by ANO in The oxidation time is about 5 min for the ANO method, but it is up to 4 h for the LPD method to obtain about 50 Å thick oxide. After adding intercathode semitransparent thin Al film between thick Al cathode lines, it is apparent that all performances of the solar cells are improved. The reliability and efficiency of solar cells can also be improved above the 200°C, 5 min postmetalization annealing treatment, and a conversion efficiency of 9.5% is shown. © 2002 The Electrochemical Society. All rights reserved." @default.
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- W2044341747 date "2002-01-01" @default.
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- W2044341747 title "Silicon Metal-Oxide-Semiconductor Solar Cells with Oxide Prepared by Room Temperature Anodization in Hydrofluosilicic Acid Solution" @default.
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- W2044341747 doi "https://doi.org/10.1149/1.1475695" @default.
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