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- W2044350030 abstract "Characteristics for damage introduced in GaAs by Reactive Ion Beam Etching (RIBE) are reported. RIBE introduced damage has mostly been recovered by low temperature annealing around 300°C. This recovery includes diffusion of and reduction in carrier killer." @default.
- W2044350030 created "2016-06-24" @default.
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- W2044350030 date "1982-09-01" @default.
- W2044350030 modified "2023-10-16" @default.
- W2044350030 title "Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching" @default.
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- W2044350030 doi "https://doi.org/10.1143/jjap.21.l537" @default.
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