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- W2044363513 abstract "The local valence electronic states of the surface, interface, and substrate for SiO 2 ultrathin films thermally grown on a Si(100)-2×1 have been investigated using Si- L 23 V V Auger-electron Si n + -2 p photoelectron coincidence spectroscopy ( n represents the number of oxygen atoms bonded to the Si). A series of Si- L 23 V V Auger electron spectra (AES) measured in coincidence with Si n + -2 p photoelectron indicate that the valence electronic states in the vicinity of the Si n + sites shift to the deeper binding-energy side as n increases. Furthermore, the Si 4+ - L 23 V V AES measured as a function of the thickness of the SiO 2 , show that the valence-band maximum of SiO 2 shifts ∼1.6 eV toward the Fermi level when the thickness of the SiO 2 film is decreased to 1.7–1.5 Å. This shift is attributed to a decrease in the number of Si 4+ and an increase in the number of Si 3+ , Si 2+ , Si 1+ , and Si 0 in the vicinity of the topmost SiO 2 layer." @default.
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- W2044363513 date "2011-08-15" @default.
- W2044363513 modified "2023-09-24" @default.
- W2044363513 title "Local Valence Electronic States of SiO<sub>2</sub> Ultrathin Films Grown on Si(100) Studied Using Auger Photoelectron Coincidence Spectroscopy: Observation of Upward Shift of Valence-Band Maximum as a Function of SiO<sub>2</sub> Thickness" @default.
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- W2044363513 doi "https://doi.org/10.1143/jpsj.80.084703" @default.
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