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- W2044413757 abstract "The physical properties of pure GaSe and the crystals doped with 0.01÷3% Al, In, Te, and S have been observed comparatively to reveal the potentials for frequency conversion of laser emission. It has been shown that GaSe:S(greater than or equal to 3%) is the most promising material for practical applications." @default.
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- W2044413757 date "2006-03-02" @default.
- W2044413757 modified "2023-09-23" @default.
- W2044413757 title "<title>Doped GaSe nonlinear crystals</title>" @default.
- W2044413757 doi "https://doi.org/10.1117/12.677065" @default.
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