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- W2044414321 abstract "The electronic properties of one-dimensional defects in ultrathin ${mathrm{Al}}_{2}{mathrm{O}}_{3}$ films have been investigated by low-temperature STM and STS. Whereas line defects between two oxide domains show almost no topographic contrast in low bias images, they appear with a distinct corrugation at higher positive sample bias. Conductance spectroscopy and imaging reveal three unoccupied states at $+2.5,$ $+3.0,$ and $+4.5mathrm{V}$ localized along the domain boundaries. The defect-induced states are responsible for the observed contrast variation and originate most likely from a nonstoichiometric oxide composition at the interface between two ${mathrm{Al}}_{2}{mathrm{O}}_{3}$ domains." @default.
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- W2044414321 date "2004-03-08" @default.
- W2044414321 modified "2023-09-27" @default.
- W2044414321 title "Defect-induced gap states in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Al</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin films on NiAl(110)" @default.
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- W2044414321 doi "https://doi.org/10.1103/physrevb.69.121401" @default.
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