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• W2044453708 abstract "We investigate the hole transport in p-channel field-effect transistors doped with boron, at low temperatures (6–28 K). In transistors with a relatively large dimension, we observe the acceptor-mediated hopping and carrier freezeout, both of which are strongly influenced by the gate bias. In nanoscale transistors, these features turn into single-charge tunneling, i.e., the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, indicating that what we have observed is single-charge-transistor operation by a single-acceptor quantum dot." @default.
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• W2044453708 date "2008-07-01" @default.
• W2044453708 modified "2023-10-17" @default.
• W2044453708 title "Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics" @default.
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• W2044453708 doi "https://doi.org/10.1016/j.apsusc.2008.02.161" @default.
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