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• W2044487536 abstract "By a simple process, we manufactured polymer thin-film transistors (PTFTs) using a 2.6 nm thick self-assembled monolayer (SAM) of alkyl chains as the gate dielectric to reduce the operating voltage of the device. These manufactured PTFTs operate with supply voltages of less than 2 V. A densely packed SAM of docosyltrichlorosilanes (DCTS) was a very efficient insulating barrier due to the very limited penetration of polymer transistor molecules into the SAM insulator. The present results show that a DCTS monolayer is suitable for use as a gate dielectric. These results enhance the prospects of using polymer TFTs with a SAM gate dielectric in low-power applications such as identification tags." @default.
• W2044487536 created "2016-06-24" @default.
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• W2044487536 date "2005-12-07" @default.
• W2044487536 modified "2023-10-08" @default.
• W2044487536 title "Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric" @default.
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• W2044487536 doi "https://doi.org/10.1063/1.2143113" @default.
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