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• W2044489856 abstract "We studied the effect of N 2 O doping in ZnO grown by metal organic chemical vapor deposition (MOCVD). The presence of nitrogen in ZnO was confirmed by secondary ion mass spectroscopy (SIMS). Capacitance data showed that there is significant carrier depletion at the ZnO/dielectric interface, and that the depletion was sensitive to vacuum annealing. Capacitance measured in N 2 O doped ZnO increased at negative gate voltages, which indicates positive charge increase in ZnO. In comparison, ZnO grown without N 2 O showed capacitance decrease at the same condition. Our results suggest that the positive charge increase is coming from hole traps introduced by nitrogen doping." @default.
• W2044489856 created "2016-06-24" @default.
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• W2044489856 date "2010-05-03" @default.
• W2044489856 modified "2023-09-26" @default.
• W2044489856 title "Acceptor behavior of N2 O in MOCVD-grown ZnO thin-film transistors" @default.
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• W2044489856 doi "https://doi.org/10.1002/pssb.200983683" @default.
• W2044489856 hasPublicationYear "2010" @default.
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