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- W2044491785 abstract "A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n−-InP top layer and guard ring conventionally used for planar devices were not needed. Two-dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field." @default.
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- W2044491785 date "1987-04-27" @default.
- W2044491785 modified "2023-09-26" @default.
- W2044491785 title "Planar avalanche photodiode with a low‐doped, reduced curvature junction" @default.
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- W2044491785 doi "https://doi.org/10.1063/1.97948" @default.
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