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• W2044578992 abstract "The density and nitrogen content of 3.5–6.5-nm-thick silicon oxide films grown by ultradry oxidation using the recently proposed in situ passivation method that uses a little pyrolytic N2O gas were determined by a charged-particle activation analysis. It was confirmed that the density increases with decreasing humidity during oxidation as well as before and exhibits a remarkable increase only at a humidity of less than 1 ppb. The humidity dependence is almost the same as that found in our previous reports, where we obtained the electrical characteristics related to the condition of the oxide–silicon substrate interface, such as the potential barrier height energy and the time-dependent dielectric breakdown lifetime. Although the binding states of the N-related bonds are still unclear, it appears that a small microscopic structural change may be brought about near the oxide–silicon substrate interface." @default.
• W2044578992 created "2016-06-24" @default.
• W2044578992 creator A5019692161 @default.
• W2044578992 date "2003-03-28" @default.
• W2044578992 modified "2023-09-27" @default.
• W2044578992 title "Density and nitrogen content of ultrathin silicon oxide gate films grown usingin situpyrolytic-gas passivation" @default.
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• W2044578992 doi "https://doi.org/10.1063/1.1562011" @default.
• W2044578992 hasPublicationYear "2003" @default.
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