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• W2044595743 abstract "A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy." @default.
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• W2044595743 date "2010-07-12" @default.
• W2044595743 modified "2023-10-16" @default.
• W2044595743 title "Nanostructures in p-GaAs with improved tunability" @default.
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• W2044595743 doi "https://doi.org/10.1063/1.3463465" @default.
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