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- W2044627336 abstract "In studying the effect of the ramping process on oxygen precipitation in Czochralski-grown silicon wafers in hydrogen annealing, we have found that the oxygen precipitate density in the bulk region depends on the ramping-up rate at temperatures between 900 and 1200 °C. Few oxygen defects are observed when the ramping-up rate is 30 °C/min or more. Decreasing the ramping-up rate exponentially increases the oxygen precipitate density. The nucleation for oxygen precipitates can therefore be controlled by adjusting the ramping-up rate during hydrogen annealing." @default.
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- W2044627336 date "1996-01-01" @default.
- W2044627336 modified "2023-09-27" @default.
- W2044627336 title "Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing" @default.
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- W2044627336 doi "https://doi.org/10.1063/1.116752" @default.
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