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- W2044721830 abstract "Strained layers superlattices are at the front of today's materials research. The potential use of strain to modify the electronic behavior of semiconductor compounds has opened new horizons for device engineers. However, the synthesis of these new materials poses new problems. Limitations imposed by dislocations creation threshold often hinder the viability of the obtained structures. Nonuniformity in strain distribution also leads to nonuniform, nonlocalized response functions in the devices thus obtained. These problems were at the origin of the later developed strain compensated superlattices. In this paper, we present a systematic study of one such structure grown by chemical beam epitaxy using high-resolution single and double crystal X-ray diffraction and transmission electron microscopy. Several samples grown under different conditions were examined and the strain induced effects on the structural and optoelectronic properties were determined in this study. Lattice mismatch was measured using {511} asymmetric and {400} symmetric X-ray reflection. The lattice misfit and the elastic strain were also calculated." @default.
- W2044721830 created "2016-06-24" @default.
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- W2044721830 date "2000-05-01" @default.
- W2044721830 modified "2023-10-14" @default.
- W2044721830 title "Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1" @default.
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- W2044721830 doi "https://doi.org/10.1016/s0026-2692(99)00127-5" @default.
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