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• W2044771285 abstract "A new growth technique of CdZnTe single crystals for room-temperature radiation detectors is developed. It is based on a free growth from the vapour phase on a oriented single crystal seed. Binary polycrystalline CdTe and ZnTe compounds are placed and heated separately to produce divided flows which were introduced into the crystal growth zone where they mixed before deposition on the seed. Monocrystalline and homogeneous materials with high electrical resistivity, low defect density, and crystal volume up to ∼50 cm3 are prepared by this technique." @default.
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• W2044771285 date "1999-02-01" @default.
• W2044771285 modified "2023-09-25" @default.
• W2044771285 title "Growth of CdZnTe single crystals for radiation detectors" @default.
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• W2044771285 doi "https://doi.org/10.1016/s0022-0248(98)00800-8" @default.
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