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- W2044776987 abstract "Degradation behaviors of low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under gate pulse stresses immersing off-state are investigated. Hot carrier (HC) effect dominates the device degradation, which is determined by pulse base voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g_b</sub> ) and falling time (t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</sub> ). More negative V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g_b</sub> and steeper t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</sub> stimulate HC degradation severely and degenerate the device more seriously. Such kind of HC induced degradation can be explained by a non-equilibrium PN junction model during dynamic transition, in which the HCs is generated by the trapped carries emitting in high electric field of PN depleted region." @default.
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- W2044776987 date "2013-07-01" @default.
- W2044776987 modified "2023-10-06" @default.
- W2044776987 title "Dynamic HC-induced degradation in n-type poly-Si thin film transistors under off-state gate pulse voltage" @default.
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- W2044776987 doi "https://doi.org/10.1109/ipfa.2013.6599186" @default.
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