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- W2044803045 abstract "Reactively sputtered InN films were prepared with a band gap of 1.70±0.02 eV, carrier concentrations of 2×1020 cm−3 and mobilities of 9 cm2 V−1 s−1. Optical constants were determined from analysis of the transmission and reflection spectra in the spectral region 0.7–2.7 microm. These constants showed a behaviour consistent with the effects of free carrier absorption. The Drude free electron theory was used to calculate the high frequency lattice dielectric constant, found to be ε∞=6.6. The imaginary part of the dielectric constant ε2, followed a proportionality ε2≈λ2.7 in the wavelength region above the band edge and below the plasma wavelength of 2.8 μm. This behaviour is typical of the scattering of electrons by ionized impurities such as nitrogen vacancies." @default.
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- W2044803045 date "1990-11-01" @default.
- W2044803045 modified "2023-10-14" @default.
- W2044803045 title "Near IR optical properties of sputtered InN films" @default.
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- W2044803045 doi "https://doi.org/10.1016/0040-6090(90)90068-o" @default.
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