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- W2044821352 abstract "Single crystal Si films have been epitaxially grown from chemical vapor-deposited poly-Si films from 2000 to 6000 Å thick on (100) Si substrates by Q-switched ruby laser pulse irradiation of 25 ns duration at power densities above 2.0 J/cm2. When a poly-Si film deposited on the thermally grown SiO2 comes in contact with the substrate at the oxide window area, epitaxial growth first occurs at the window area. It then propagates in the lateral direction over the SiO2 up to a distance of 1.2 µm from the oxide edge. In Si films grown on SiO2, dislocations and stacking faults lying nearly in the <311> directions remain." @default.
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- W2044821352 date "1980-01-01" @default.
- W2044821352 modified "2023-09-27" @default.
- W2044821352 title "Si Bridging Epitaxy from Si Windows onto SiO<sub>2</sub>by<i>Q</i>-Switched Ruby Laser Pulse Annealing" @default.
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- W2044821352 doi "https://doi.org/10.1143/jjap.19.l23" @default.
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