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- W2045014311 abstract "This papers reports, for the first time, on a piezoelectric response investigation of AlGaN/GaN-based circular high electron mobility transistor (C-HEMT) structures, which can be potentially applied in new devices for dynamic pressure and stress sensing. We present the processing technology and a piezoelectric performance analysis of the C-HEMT devices. The analysis obtained experimentally is compared with the results of electro-mechanical simulation. The measurements and simulations revealed a good linearity in the piezoelectric response and excellent stress detection sensitivity that is independent from the frequency range measured. The detection sensitivity of the C-HEMT stress sensor can be easily tuned by design of the Schottky ring gate area." @default.
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- W2045014311 date "2011-08-01" @default.
- W2045014311 modified "2023-10-18" @default.
- W2045014311 title "Piezoelectric response of AlGaN/GaN-based circular-HEMT structures" @default.
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- W2045014311 doi "https://doi.org/10.1016/j.mee.2010.12.013" @default.
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