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- W2045031460 abstract "The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing between a SF and the edge of p-well region; where the maximum electric field is induced. The mechanism of the leakage current is discussed in detail in a separate paper." @default.
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- W2045031460 date "2010-04-01" @default.
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- W2045031460 title "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC" @default.
- W2045031460 doi "https://doi.org/10.4028/www.scientific.net/msf.645-648.339" @default.
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