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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2045122005> ?p ?o ?g. }

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• W2045122005 abstract "We report successful growth of antiphase domain-free InP on Si(001) without any preannealing of the Si substrate using low-pressure metalorganic chemical vapor deposition in contrast to present belief that high-temperature substrate annealing prior to growth is imperative to achieve this goal. Optimized crystallographic and optical properties are obtained for an offcut along [11̄0] of 4°±0.4°, an InP buffer layer temperature of 400 °C±10 °C, a layer deposition temperature of 640 °C, and low growth rates r≤2.7 μm/h." @default.
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• W2045122005 date "1991-01-21" @default.
• W2045122005 modified "2023-10-17" @default.
• W2045122005 title "Low-temperature metalorganic chemical vapor deposition of InP on Si(001)" @default.
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• W2045122005 doi "https://doi.org/10.1063/1.104662" @default.
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