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• W2045153511 abstract "Thin films of TiAlN were deposited on (111) oriented silicon single crystal substrates from a composite Ti–Al target by DC reactive magnetron sputtering at 773 K under various N2 flow rates. Substantial influence of N2 flow rate on the rate of deposition, grain size, crystallinity, composition, hardness and resistivity was observed. While the deposition rate, grain size and the ratio of concentration of Ti to Al of the deposited TiAlN films decreased with increasing N2 flow rate, the resistivity of the films increased with increasing N2 flow rate." @default.
• W2045153511 created "2016-06-24" @default.
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• W2045153511 date "2007-01-01" @default.
• W2045153511 modified "2023-09-25" @default.
• W2045153511 title "Influence of nitrogen flow rate on growth of TiAlN films prepared by DC magnetron sputtering" @default.
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• W2045153511 doi "https://doi.org/10.1179/174329407x161627" @default.
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