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• W2045161792 abstract "The effect of the CF4/Ar mixing ratio on the etching behaviour and mechanisms for Pb(Zr,Ti)O3 (PZT) thin films in an inductively coupled plasma was carried out. It was found that an increase of Ar mixing ratio causes non-monotonic behaviour of the PZT etch rate, which reaches a maximum of 2.38 nm/s at 80% Ar. Investigating the plasma parameters, we found a weak sensitivity of both electron temperature and electron density to the change of CF4/Ar mixing ratio. A combination of zero-dimensional plasma model with the model of surface kinetics shows the possibility of a non-monotonic etch rate behaviour due to the concurrence of physical and chemical pathways in the ion-assisted chemical reaction." @default.
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• W2045161792 date "2004-08-01" @default.
• W2045161792 modified "2023-10-17" @default.
• W2045161792 title "Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma" @default.
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• W2045161792 doi "https://doi.org/10.1016/j.vacuum.2004.03.013" @default.
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