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- W2045164014 abstract "The reaction of gas-phase deuterium atoms with C2D5Br (EtBr) adsorbed on Si(100) is studied using temperature programmed desorption and Auger electron spectroscopy. EtBr adsorption on bare Si(100), at 300 K, without D atom preexposure, dissociatively chemisorbs into ethyl groups and bromine. Ethyl groups undergo β-deuteride elimination to desorb ethylene at 600 K. Bromine is desorbed as the etch product SiBr at 950 K. When D atoms are dosed after EtBr, ethylene TPD peaks shift to higher temperature. A small shift (30 to 50 K) is attributed to the removal of bromine at low D atom fluences (<6.6×1014 atoms cm−2). A larger shift (∼100 K), with higher D atom fluences, is caused by the adsorption of D onto silicon sites occupied by ethyl groups. The latter prevents β-deuteride elimination until D2 desorption begins. Ethyl groups are removed during exposure to D atoms. The cross sections for ethyl group removal are on the order of 10−17 cm2 at temperatures between 300–450 K; the relatively low cross sections along with the determined activation energy of 1.12 kcal mol−1, suggest ethyl groups are removed through a direct Eley–Rideal mechanism. No evidence is found for the decomposition of ethyl groups during D atom exposure." @default.
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- W2045164014 date "1998-08-01" @default.
- W2045164014 modified "2023-09-23" @default.
- W2045164014 title "Reactions of atomic deuterium with C2D5Br on Si(100)" @default.
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- W2045164014 doi "https://doi.org/10.1016/s0039-6028(98)00359-8" @default.
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