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- W2045167912 abstract "In this paper, a tensile-strained layer is used to control the quantum dot arrangements. A 3 nm GaAs tensile-strained layer is grown on InP (001) substrate, and a four-monolayer InAs compressed layer is then grown on top by LP-MOVPE. Atomic force microscopy (AFM) measurements were performed. AFM images indicate that the InAs quantum dots are arranged along two orthogonal directions, their diameter is about 30 nm, the size fluctuation is only 10%, and their density is 8.8×109 cm−2, which is higher than that grown directly on InP or GaAs substrates. An identical structure, except for the presence of 30 nm of GaAs, was also grown. The islands on top of the 30 nm GaAs are mainly very big and rectangular in shape. We demonstrate that these characteristics originate from the modulated stress field of the GaAs tensile-strained layer." @default.
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- W2045167912 date "1999-03-01" @default.
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- W2045167912 title "Using the tensile stress field to control quantum dot arrangements" @default.
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