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- W2045171423 abstract "The reduced capacitance and increased barrier heights observed for ZrN Schottky contacts to n-GaAs annealed from 700 to 850 degrees C suggest the progressive formation of a metal-p/sup +/-n diode. Since the position of the potential maximum varies with the applied voltage, the effective active profile of the p/sup +/ region can be determined by combining capacitance-voltage and current-density-voltage measurements. The analysis assumes only that the depletion approximation holds and the current is dominated by thermionic emission. When this analysis was applied to ZrN/GaAs Schottky contacts, it was found that the p/sup +/ region had penetrated more deeply into the n-type substrate as the annealing temperature was increased, consistent with the formulation of a metal-p/sup +/-n diode.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
- W2045171423 created "2016-06-24" @default.
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- W2045171423 date "1988-08-01" @default.
- W2045171423 modified "2023-09-26" @default.
- W2045171423 title "Determination of the doping profile near the metal-semiconductor interface of ZrN/GaAs contacts" @default.
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- W2045171423 doi "https://doi.org/10.1109/16.2564" @default.
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