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- W2045178529 abstract "Abstract The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite n-GaN with impurity concentration 1.1 × 10 16 cm − 3 ÷ 1.9 × 10 18 cm − 3 and in wurtzite p-GaN with impurity concentration 1.9 × 10 19 cm − 3 ÷ 2.6 × 10 20 cm − 3 are considered. The temperature dependences of electron mobility in the range 15 ÷ 500 K and hole mobility in the range 100 ÷ 1000 K are calculated." @default.
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- W2045178529 date "2012-03-01" @default.
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- W2045178529 title "Charge carrier mobility in gallium nitride" @default.
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- W2045178529 doi "https://doi.org/10.1016/j.diamond.2011.12.018" @default.
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