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- W2045200051 endingPage "1469" @default.
- W2045200051 startingPage "1463" @default.
- W2045200051 abstract "Hydrogenated microcrystalline silicon thin films can be deposited at low substrate temperatures using plasma enhanced–or hot wire–chemical vapor deposition using silane, reactive magnetron sputtering of silicon, or related techniques. Microcrystalline silicon is deposited when a large quantity of molecular hydrogen is added to the process gas such that a large flux of atomic hydrogen impinges on the film growth surface; otherwise, the films are amorphous. Three different microscopic mechanisms have been hypothesized to explain the formation of the microcrystalline phase. In essence, the hypotheses are that atomic hydrogen: (i) enhances the surface diffusion of Si adspecies, which in turn raises the probability of crystalline phase formation, (ii) promotes a subsurface transformation of amorphous into microcrystalline Si, or (iii) preferentially etches amorphous regions such that only microcrystalline Si survives to produce film growth. In this work, we critically test mechanism (i) as follows. We deposit ..." @default.
- W2045200051 created "2016-06-24" @default.
- W2045200051 creator A5023649166 @default.
- W2045200051 creator A5047058288 @default.
- W2045200051 date "2001-01-15" @default.
- W2045200051 modified "2023-09-26" @default.
- W2045200051 title "Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies" @default.
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- W2045200051 doi "https://doi.org/10.1063/1.1334639" @default.
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