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• W2045205672 abstract "Abstract The creation process of thermally induced defects in B-doped hydrogenated amorphous Six.C1-x samples has been studied by measuring the annealing time dependence of dark d.c. conductivity. The results show that the creation process of thermally induced defects exhibits a stRevched-exponential-like form; the equilibrium values increase with increasing annealing temperature while the relaxation time decreases with increasing annealing temperature. In particular, the stRevched-exponential factor also decreases with increasing annealing temperature, which is contrary to that of the annealing process of frozen-in defects. A model involving two different trapping processes of transportable H in the defect creation and annealing processes is proposed to explain this result." @default.
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• W2045205672 date "1993-04-01" @default.
• W2045205672 modified "2023-09-27" @default.
• W2045205672 title "Creation process of thermally induced defects in boron-doped hydrogenated amorphous silicon-carbon films" @default.
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• W2045205672 doi "https://doi.org/10.1080/13642819308207690" @default.
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