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• W2045224175 abstract "An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory." @default.
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• W2045224175 date "2012-04-30" @default.
• W2045224175 modified "2023-10-17" @default.
• W2045224175 title "Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction" @default.
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• W2045224175 doi "https://doi.org/10.1063/1.4711209" @default.
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