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• W2045253237 abstract "The n-type microcrystalline cubic silicon carbide (µc-3C–SiC:H) films were deposited by hot wire chemical vapor deposition (HWCVD) at a low substrate temperature (∼300 °C). Heterojunction silicon based photovoltaic devices were fabricated by depositing wide band gap n-type µc-3C–SiC thin films on p-type Si wafers, whose thickness and resistivity were 200 µm and 1–10 Ω cm, respectively. The silicon wafers were textured using alkaline etchant prior to the device fabrication. The photovoltaic parameters of a typical device were found to be Voc=560 mV, Jsc=35.0 mA/cm2, fill factor (F.F.) = 0.724, and η=14.20%. Numerical analysis was performed using automat for simulation of hetero structures (AFORS-HET), a one-dimensional device simulators to determine the probable cause of the changes in device parameters before and after the ageing of the filament." @default.
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• W2045253237 date "2007-01-10" @default.
• W2045253237 modified "2023-09-24" @default.
• W2045253237 title "Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition" @default.
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• W2045253237 doi "https://doi.org/10.1143/jjap.46.1" @default.
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