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• W2045293429 abstract "We present cross-sectional scanning tunneling microscopy data of a type of InGaAs∕GaAs quantum-dot structure characterized by a hollow center. This void structure develops during a long growth interruption applied after deposition of a quantum dot layer and a thin cap layer, resulting in an eruption of indium-rich material. Subsequent fast overgrowth does not fill the void completely. This growth behavior demonstrates limitations of current strategies to grow large quantum dots." @default.
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• W2045293429 date "2004-10-25" @default.
• W2045293429 modified "2023-10-03" @default.
• W2045293429 title "Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy" @default.
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• W2045293429 doi "https://doi.org/10.1063/1.1808884" @default.
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