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- W2045331322 abstract "InAs films were deposited from In and As4 fluxes on Si(100) substrates by ion-assisted deposition (IAD). The use of Ar ion irradiation during film nucleation improved the substrate coverage and crystalline perfection. The effect of As4-to-In flux ratio rAs and substrate temperature Ts on the nucleation, island coalescence, smoothening, and crystalline perfection of InAs films on Si(100) was studied using reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and X-ray diffraction. Complete substrate coverage was achieved at the lowest film thickness by using rAs ≈ 1 and Ts ≈ 380°C. Continuous InAs films that gave streaky, reconstructed RHEED patterns were obtained at thickness of ≈ 800 nm. It was also found that the presence of anti-phase domains in InAs films led to residual surface roughness in thick films. The typical X-ray rocking curve full width at half-maximum was ≈ 3000 arc sec at a film thickness of 0.4 μm." @default.
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- W2045331322 date "1994-04-01" @default.
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- W2045331322 title "Morphology and crystalline perfection of InAs films on Si(100)" @default.
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- W2045331322 doi "https://doi.org/10.1016/0022-0248(94)90974-1" @default.
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