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• W2045392919 abstract "Nano-layered films of Cu/Cu(Zr)/Zr(Ge) and Cu/Cu(Zr) were deposited on the p-SiOC:H/Si substrates by RF magnetron sputtering in Ar. Samples were subsequently annealed at temperatures ranging from 350–500 °C in vacuum, and characterized by four-point probe technique (FPPT), glancing incident angle X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and transmission electron microscopy (TEM), respectively. Results indicated that these samples have a high thermal stability and favorable electrical property when the Ge content in the Zr(Ge) nano-interlayer ranged from 26% to 79%. The fundamental relationship between the alloy content of the Zr(Ge) nano-interlayer and the property of the Cu/Cu(Zr)/Zr(Ge)/SiOC:H/Si film stacks was established, and the critical temperature of the self-formed ZrOx/ZrSiyOx barrier formation was also revealed." @default.
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• W2045392919 date "2014-04-01" @default.
• W2045392919 modified "2023-09-25" @default.
• W2045392919 title "Improvement of thermal stability and electrical property of Cu/Cu(Zr)/SiOC:H film stack by controlling the structure and composition of Zr(Ge) nano-interlayer" @default.
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• W2045392919 doi "https://doi.org/10.1016/j.mee.2014.02.009" @default.
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