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• W2045491055 abstract "In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> , H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and CO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> to SiH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> , and hydrogen dilution concentration. By introducing the CO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> . With increasing the CO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /SiH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> ratio, the absorption at 780 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-4</sup> S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail." @default.
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• W2045491055 date "2011-06-01" @default.
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• W2045491055 title "Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films" @default.
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• W2045491055 doi "https://doi.org/10.1109/pvsc.2011.6186583" @default.
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