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• W2045498003 abstract "It has previously been shown that multimolecular organic nanostructures form on H-Si(100)-2×1 via a radical mediated growth process. In this mechanism, growth begins through the addition of a molecule to a silicon surface dangling bond, followed by the abstraction of a neighboring H atom and generation of a new dangling bond on the neighboring site. Nanostructures formed by this mechanism grow along one edge of a dimer row. Here, we explored the possibility of using lithographically prepared, biased metal contacts on the silicon surface to generate an electric field that orients molecules during the growth process to achieve growth in the perpendicular-to-row direction. The formation of some nanostructures in a direction that was nearly perpendicular to the dimer rows was achieved, whereas such features were not formed in the absence of the field. Analysis of the scanning tunneling microscopy images suggests that the formation of these nanostructures may involve self-templating effects in addition to dangling bond diffusion rather than a straightforward addition∕abstraction mechanism. These initial results offer some indication that a molecular pattern writer can be achieved." @default.
• W2045498003 created "2016-06-24" @default.
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• W2045498003 date "2011-03-18" @default.
• W2045498003 modified "2023-09-27" @default.
• W2045498003 title "Indications of field-directing and self-templating effects on the formation of organic lines on silicon" @default.
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• W2045498003 doi "https://doi.org/10.1063/1.3562367" @default.
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• W2045498003 hasPublicationYear "2011" @default.
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