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W2045582019 abstract "Single and multiple energy Fe+ implants are performed in n-type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material." @default.
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W2045582019 date "1989-01-15" @default.
W2045582019 modified "2023-10-16" @default.
W2045582019 title "Fe implantation in In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP" @default.
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W2045582019 doi "https://doi.org/10.1063/1.343129" @default.
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