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- W2045590982 abstract "Zero-bias Schottky barrier height (ϕBp) of reactive-sputtered TiN(∼40nm) on p-type Si(100) was determined at room temperature and the effect of heat treatment was investigated by forward current–voltage (I–V) measurements. The TiN remained amorphous following annealing. The zero-bias barrier heights for the as-deposited and annealed specimens were in the range of 0.53–0.64V. The lower ϕBp values of 0.53–0.54V are related to as-deposited and 673K annealed specimens, whereas the 0.62–0.64V values refer to samples annealed at 773–783K. Forward I–V measurements of as-deposited (300K) TiN∕Si diodes were performed in the temperature range of 220–285K. The barrier height was determined by the activation energy method, resulting in ϕBp=0.58V." @default.
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- W2045590982 date "2004-09-01" @default.
- W2045590982 modified "2023-09-23" @default.
- W2045590982 title "Evaluation of Schottky barrier height of TiN∕p-type Si(100)" @default.
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- W2045590982 doi "https://doi.org/10.1116/1.1774199" @default.
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