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- W2045595425 abstract "The two main topics with respect to better gallium nitride (GaN)-based optoelectronic device performance are the improvement of crystal quality and of light extraction. Concerning the first topic, the epitaxial growth of GaN-related materials has to be improved. Since native substrates with good quality are still expensive, foreign substrates like sapphire or silicon which are much cheaper are used, but they introduce a lattice as well as a thermal mismatch leading to detrimental crystal defects. Several approaches to reduce the defect density exist, but in most cases they are coupled with a much higher technological effort. We present an alternative solution to decrease the defect density by the growth of GaN nanostructures, where the small footprint and high aspect ratio leads to a much lower influence of the substrate. Metal-organic vapour-phase epitaxy of GaN nanostructures and InGaN/GaN multi-quantum wells was carried out in a vertical reactor with close-coupled showerhead. Studies on the morphologic properties have been carried out by scanning electron microscopy and energy-dispersive X-ray spectroscopy to reveal the influence of growth parameters and material composition. Cathodoluminescence measurements show the good optical properties of the GaN as well as of the InGaN/GaN structures." @default.
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- W2045595425 date "2009-02-01" @default.
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- W2045595425 title "Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications" @default.
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- W2045595425 doi "https://doi.org/10.1016/j.mejo.2008.07.054" @default.
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