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- W2045644983 abstract "Abstract This paper describes the growth kinetics of GaSb under atomic layer depositions by molecular beam epitaxy (MBE). In order to understand the growth kinetics, the reconstruction changes were related with the shift of surface composition using a time-resolved reflection high-energy electron diffraction (RHEED) technique. This understanding was applied to keep the growth condition at the optimal by monitoring the RHEED oscillation waveform." @default.
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- W2045644983 date "1995-01-01" @default.
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- W2045644983 title "Time-resolved reflection high energy electron diffraction analysis for atomic layer depositions of GaSb by molecular beam epitaxy" @default.
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- W2045644983 doi "https://doi.org/10.1016/0022-0248(94)00509-5" @default.
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