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• W2045675008 abstract "The objective of this work was to further study the nature of mechanisms which degrade the characteristics of unprotected metal-oxide-semiconductor (MOS) structures during low level voltage stress conditions. A series of experiments have been performed on unprotected custom fabricated MOSFET and MOS-C structures using quiescent current and capacitance-voltage measurement techniques to investigate the effect of electrical overstress (EOS) due to electrostatic discharge (ESD). A charge injection model is proposed to explain the results." @default.
• W2045675008 created "2016-06-24" @default.
• W2045675008 creator A5041046286 @default.
• W2045675008 creator A5041833473 @default.
• W2045675008 date "1993-12-01" @default.
• W2045675008 modified "2023-10-14" @default.
• W2045675008 title "Experimental study of unprotected MOS structures under EOS/ESD conditions" @default.
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• W2045675008 doi "https://doi.org/10.1016/0304-3886(93)90013-w" @default.
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