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• W2045679976 abstract "The optical absorption coefficient of silicon for photon energies between 1.65 and 4.77 eV (750– 260 nm) has been determined at elevated temperatures (up to 700 °C) using polarization modulation ellipsometry. For photon energies below ∼3 eV (∼410 nm), the absorption coefficient increases exponentially with temperature from room 24° C to 700 °C, increasing by a factor of approximately 5 over that temperature range. The threshold for direct band-gap absorption moves to lower energies with increasing temperature." @default.
• W2045679976 created "2016-06-24" @default.
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• W2045679976 date "1982-07-15" @default.
• W2045679976 modified "2023-10-09" @default.
• W2045679976 title "Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures" @default.
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• W2045679976 doi "https://doi.org/10.1063/1.93454" @default.
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