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- W2045684441 abstract "STMicroelectronics, Avenue C´elestin Coq, 13106 Rousset, FranceReceived: 25 August 2013 / Received in final form: 11 February 2014 / Accepted: 6 March 2014Published online: 21 April 2014 – ⃝c EDP Sciences 2014Abstract. An experimental methodology compliant with industrial constraints was deployed to uncover theorigin of soft breakdown events in large planar silicon-based NMOS capacitors. Complementary advancedfailure analysis techniques were advantageously employed to localize, isolate and observe structural defectsat nanoscale. After an accurate localization of the failing area by optical beam-induced resistance change(OBIRCH), focused ion beam (FIB) technique enabled preparing thin specimens adequate for transmissionelectron microscopy (TEM). Characterization of the gate oxide microstructure was performed by high-resolution TEM imaging and energy-filtered spectroscopy. A dedicated experimental protocol relying oniterative FIB thinning and TEM observation enabled improving the quality of electron imaging of defectsat atom scale. In that way, the gate oxide integrity was evaluated and an electrical stress-induced siliconepitaxy was detected concomitantly to soft breakdown events appearing during constant voltage stress.The growth of silicon hillocks enables consuming a part of the breakdown energy and may prevent the softbreakdown event to evolve towards a hard breakdown that is catastrophic for device functionality." @default.
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- W2045684441 date "2014-04-01" @default.
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- W2045684441 title "Nanostructural defects evidenced in failing silicon-based NMOS capacitors by advanced failure analysis techniques" @default.
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- W2045684441 doi "https://doi.org/10.1051/epjap/2014130386" @default.
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