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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2045687719> ?p ?o ?g. }

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• W2045687719 abstract "We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT®) in an AIX2600HT Planetary Reactor®. Growth of GaN on sapphire as well as AlGaN and InGaN heterostructures with different material compositions were monitored in real time. During growth of a laser-diode text structure the impact of water curvature on wavelength uniformity across the water is demonstrated. Here, the known drastic dependence of indium incorporation on growth temperature requires a uniform substrate surface temperature and therefore a flat wafer during growth of the MQW region. Wafer bowing depending on substrate properties, growth temperature and the insertion of a strain-compensating interlayer is carefully examined to optimize the growth procedure." @default.
• W2045687719 created "2016-06-24" @default.
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• W2045687719 date "2007-01-01" @default.
• W2045687719 modified "2023-10-17" @default.
• W2045687719 title "Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements" @default.
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• W2045687719 doi "https://doi.org/10.1016/j.jcrysgro.2006.10.186" @default.
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