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- W2045748048 abstract "Thin AlN film was deposited as a passivation layer on the surface of post-processed AlGaN/GaN heterojunction field effect transistors (HFETs) by radio-frequency (RF) plasma induced molecular beam epitaxy. The AlN layer was grown at 150 °C in a migration enhanced epitaxy (MEE) mode using alternating beams of Al and N. Addition of this surface layer reduced RF channel current slump and RF full channel current at 8 GHz increased from 400 to 800 mA/mm. The saturated output power density of 0.3 μm × 100 μm HFETs at 8 GHz was doubled from 0.8 to 1.6 W/mm. Other characteristics of HFETs before and after the AlN deposition and materials properties of the low temperature grown AlN were measured. AlN surface layer appears an effective passivation for AlGaN/GaN HFETs." @default.
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- W2045748048 date "2004-02-01" @default.
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- W2045748048 title "Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors" @default.
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- W2045748048 doi "https://doi.org/10.1016/s0038-1101(03)00324-1" @default.
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